Status of MAPS ECAL Simulation

19th Janurary 2007

at Rutherford Appleton Laboratory

Yoshinari Mikami

University of Birmingham

Contents: following up last year's isuues

-Weighted mean for number of cell hits

-Linearity up to 400 GeV single electron

-B fields effect

-Energy resolution without charge diffusion

-36&48 contiguous cell hit patterns

-Next steps

W thickness: 2.1mm for first 20 layers

4.2mm for last 10 layers

layer# =1

layer# =21

20

30

180GeV e-

with no weight

180GeV e-

with weight

Nweight = S Nhit + 2 S Nhit

180 GeV e-

Longitudinal shower shape in 30layers:

#Cell hits / event

#Cell hits / event

#Events

#Events

#Cell hits

Weighted #Cell hits

Linearity for #cell hits

Weighted #cell hits

v.s.

Incoming e- energy

50mm X 50mm cell size

B fields is off

Charge diffusion is not yet added.

Linearity for #cell hits

Weighted #cell hits

v.s.

Incoming e- energy

50mm X 50mm cell size

B fields is off

Charge diffusion is not yet added.

400 GeV single e-

Cell hit energy

Linearity for #cell hits

Weighted #cell hits

v.s.

Incoming e- energy

50mm X 50mm cell size

B fields is off

Charge diffusion is not yet added.

400 GeV single e-

Cell hit energy

400 GeV

single e-

longitudinal

shower shape

Energy leak

Linearity for #cell hits

Weighted #cell hits

v.s.

Incoming e- energy

50mm X 50mm cell size

B fields is off

Charge diffusion is not yet added.

400 GeV single e-

Cell hit energy

400 GeV

single e-

longitudinal

shower shape

Energy leak

100 GeV e-

Weighted #cell hits

400 GeV e-

Weighted #cell hits

(2) 1 GeV e-

starting in front of ECAL

with no B fields

Energy resolution and B field effect

(1) 1 GeV e-

starting from IP

with no B field

s/Mean = (13.3 Ø0.2)%

1 GeV electron energy resolutions:

(1) With no B field and starting the e- from IP: s/Mean = 14.6/109.6 = (13.3 Ø 0.2)%

(2) With no B field and starting the e- right in front of the ECAL: s/Mean = 14.6/110.4 = (13.3 Ø 0.2)%

(1) 1 GeV e-

starting from IP

with no B field

#Cell hits / event

Cell hits energy

0 10keV

#Events

#Cell hits

(2) 1 GeV e-

starting in front of ECAL

with no B fields

s/Mean = (13.3 Ø0.2)%

0 10keV

#Cell hits / event

50mm X 50mm cell size

Charge diffusion is not yet added.

No noise and no threthould

(2) 1 GeV e-

starting in front of ECAL

with no B fields

Energy resolution and B field effect

(1) 1 GeV e-

starting from IP

with no B field

s/Mean = (13.3 Ø0.2)%

(3) 1 GeV e-

starting in front of ECAL

with 4T B field

s/Mean = (14.3 Ø 0.2)%

1 GeV electron energy resolutions:

(1) With no B field and starting the e- from IP: s/Mean = 14.6/109.6 = (13.3 Ø 0.2)%

(2) With no B field and starting the e- right in front of the ECAL: s/Mean = 14.6/110.4 = (13.3 Ø 0.2)%

(3) With 4T B field and starting the e- right in front of the ECAL: s/Mean = 16.0/112.0 = (14.3 Ø 0.2)%

(1) 1 GeV e-

starting from IP

with no B field

(3) 1 GeV e-

starting in front of ECAL

with 4T B field

#Cell hits / event

Cell hits energy

0 10keV

#Events

#Cell hits

(2) 1 GeV e-

starting in front of ECAL

with no B fields

s/Mean = (13.3 Ø0.2)%

0 10keV

#Cell hits / event

50mm X 50mm cell size

Charge diffusion is not yet added.

No noise and no threthould

0 10keV

#Cell hits / event

Energy resolution

4T B field

No threshold is applied for cell hit energy.

Counting number of cell hit in a event without clustering.

Weighted number of cell hits is used for different W thickness layers.

Sensor level response is not implemented yet.

s / E = (13.9Ø0.2)% / + (0.0041Ø0.0003)

E with GeV and using up to 180 GeV.

36 & 48 contiguous cell (in z direction) hit pattern

36 contiguous cells,

1 GeV e-

Average: (1.17 +/- 0.06) hits

Energy increase ~15%

50mm X 50mm cell size

B fields is off

Charge diffusion is not yet added.

36 contiguous cells,

100 GeV e-

Average: (1.45 +/- 0.01) hits

Energy increase ~ 45%

36 contiguous cells,

400 GeV e-

Average: (1.80 +/- 0.01) hits

Energy increase ~ 80%

48 contiguous cells,

1 GeV e-

Average: (1.17 +/- 0.06) hits

Energy increase ~ 15%

48 contiguous cells,

100 GeV e-

Average: (1.50 +/- 0.01)hits

Energy increase ~51%

48 contiguous cells,

400 GeV e-

Average: (1.91 +/- 0.01) hits

Energy increase ~ 92%

36 and 48 has similar hit pattern -> Cell hits position will be close inside contiguous lines.

Average hit and energy increase ratio is similar. -> It willn't be charge sharing hits but will be normal hits.

Next steps

Dead area implementation

Using Anne-Marie's code for charge shareing compensation

Energy/Angle/Position resolutions

Devoting on a clustering algorithem development

e.g. Requiring high density with sylinder based topology

yoshi mikami

2006-10-13T18:36:51